Please use this identifier to cite or link to this item:
https://cris.library.msu.ac.zw//handle/11408/1855Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chawanda, Albert | - |
| dc.date.accessioned | 2016-10-30T11:58:45Z | - |
| dc.date.available | 2016-10-30T11:58:45Z | - |
| dc.date.issued | 2010 | - |
| dc.identifier.uri | repository.up.ac.za/dspace/bitstream/handle/2263/28009/00front.pdf?sequence | - |
| dc.identifier.uri | http://hdl.handle.net/11408/1855 | - |
| dc.description.abstract | Metal-semiconductor contacts have been widely studied in the past 60 years. These structures are of importance in the microelectronics industry. As the scaling down of silicon-based complementary metal-oxide-semiconductor (CMOS) devices becomes more and more challenging, new material and device structures to relax this physical limitation in device scaling are now required. Germanium (Ge) has been proposed as a potential alternative to silicon. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | University of Pretoria | en_US |
| dc.subject | Electrical,structural characterization, metal germanides | en_US |
| dc.title | Electrical and structural characterization of metal germanides | en_US |
| dc.type | Thesis | en_US |
| item.grantfulltext | none | - |
| item.cerifentitytype | Publications | - |
| item.openairetype | Thesis | - |
| item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
| item.fulltext | No Fulltext | - |
| item.languageiso639-1 | en | - |
| Appears in Collections: | Thesis | |
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